2007. 5. 22 1/2 semiconductor technical data ktc4369 epitaxial planar npn transistor revision no : 2 general purpose application. features good linearity of h fe . complementary to kta1658. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) note : h fe (1) classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 3 a base current i b 0.3 a collector power dissipation (tc=25 ) p c 15 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =20v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 30 - - v dc current gain h fe (1) (note) v ce =2v, i c =0.5a 70 - 240 h fe (2) v ce =2v, i c =2.5a 25 - - collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a - 0.3 0.8 v base-emitter voltage v be v ce =2v, i c =0.5a - 0.75 1.0 v transition frequency f t v ce =2v, i c =0.5a - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 35 - pf
2007. 5. 22 2/2 ktc4369 revision no : 2p collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta safe operating area ce collector-emitter voltage v (v) 1 3 10 100 0.1 c collector current i (a) collector-emitter saturation ce(sat) 0.01 3 0.03 0.01 0.003 collector current i (a) c v - i h - i c collector current i (a) 0.003 0.01 1 3 fe dc current gain h 10 i - v c ce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) 1.6 3.2 4.8 6.4 8.0 9.6 1.0 2.0 3.0 4.0 common emitter tc=25 c 40 30 20 15 10 8 5 i =3ma 0 b fe c 0.3 0.1 0.03 30 50 100 300 500 1k common emitter v =2v ce tc=75 c tc=25 c tc=-25 c ce(sat) c voltage v (v) 0.1 0.3 1 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b tc=75 c tc=25 c tc=-25 c p (w) 20 40 60 80 100 120 140 160 4 8 12 16 20 24 28 tc=ta infinite heat sink 30 0.3 0.5 1 3 5 10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max(pulsed) c c i max (continuous) * 1ms * * 1 0ms 500ms * dc opera tion t c=25 c v max ceo i - v c be be base-emitter voltage v (v) 0 c 0 collector current i (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.5 1.0 1.5 2.0 2.5 3.0 common emitter v =2v ce t =75 c c c t =25 c c t =-25 c
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